MRF7S19100N Motorola

Артикул

MRF7S19100N

Производитель

Motorola

Описание

MRF7S19100N - RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for CDMA base station applications with frequencies from 1930 to1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To beused in Class AB and Class C for PCN - PCS/cel lular radi o and WLLapplications.• Typical Single- Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR