MW6S010N Motorola

Артикул

MW6S010N

Производитель

Motorola

Описание

MW6S010N - RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETsDesigned for ClassA or Class AB base station applications with frequenciesup to 1500 MHz. Suitable for analog and digital modulation and multicarrieramplifier applications.• Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ =125 mA, Pout = 10 Watts PEPPower Gain — 18 dBDrain Efficiency — 32%IMD — -37 dBc• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CWOutput PowerFeatures• Characterized with Se